Robert S. Chau is an Intel Senior Fellow and director of Components Research in Technology Development at Intel Corporation. Chau is responsible for Intel’s research efforts, including internal research and external collaborations, to enable future process technology options for Intel’s technology development organizations. Prior to his current role Chau was director of Transistor Research and Nanotechnology in the Components Research organization. Chau joined Intel in 1989, became an Intel Fellow in 2000 and an Intel Senior Fellow in 2005. During his career at Intel he developed nine generations of Intel gate dielectrics, including the high-k/metal-gate, along with many transistor innovations and process technologies used in various Intel manufacturing processes and microprocessor products. He also introduced many new process modules and novel device nanotechnologies for Intel’s future logic and system-on-chip (SoC) processes. Chau has earned seven Intel Achievement Awards, including one for the research and development of Intel’s 22nm Tri-Gate transistor technology. He was the co-recipient of the 2008 SEMI Award for North America for the development of Intel’s 90nm strained silicon technology and the 2008 EDN Innovator of the Year award for the development of Intel’s 45nm high-k metal gate transistor technology. Chau received the 2012 IEEE Jun-ichi Nishizawa Medal for “sustained leadership in developing innovative transistor technologies for advanced logic products.” Chau received bachelor’s, master’s and Ph.D. degrees in electrical engineering from The Ohio State University. He holds more than 430 issued U.S. patents and was elected an IEEE Fellow. In April 2010 he was recognized by The Oregonian newspaper as the most prolific inventor in the state of Oregon. In 2013 Chau was elected a member of the U.S. National Academy of Engineering. He was the recipient of the 2015 Intel Inventor of the Year award.